Electro-optical device, method of manufacturing the same, and electronic apparatus

ABSTRACT

An electro-optical device includes: a substrate; data lines and scanning lines extending to cross each other on the substrate; thin film transistors disposed below the data lines on the substrate; storage capacitors each of which is disposed in a region including a region facing a channel region of each of the thin film transistors in plan view above the substrate and is disposed above each of the data lines, each of the storage capacitors being formed by stacking a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode in this order from below; and pixel electrodes that are disposed for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate and are disposed above the storage capacitors, each of the pixel electrodes being electrically connected to the pixel-potential-side electrode and each of the thin film transistors. At least one of the fixed-potential-side electrode and the pixel-potential-side electrode includes a first conductive light shielding film.

This application claims the benefit of Japanese Patent Application No.2005-062007, filed Mar. 7, 2005. The entire disclosure of the priorapplication is hereby incorporated by reference herein in its entirety.

BACKGROUND

1. Technical Field

The present invention relates to an electro-optical device, such as aliquid crystal device, to a method of manufacturing the same, and to anelectronic apparatus, such as a liquid crystal projector.

2. Related Art

The electro-optical device includes pixel electrodes, scanning lines,data lines, and TFTs (thin film transistors) serving as pixel switchingelements, which selectively drive the corresponding pixel electrodes, ona substrate and is configured to be driven in an active matrix drivingmethod. In addition, storage capacitors may be provided between the TFTsand the pixel electrodes for the purpose of high contrast and so on. Theabove-mentioned elements are integrated on the substrate in a highdensity so as to improve the pixel aperture ratio or to make the devicesmall (for example, see JP-A-2002-156652).

As such, the electro-optical device is required to perform higherquality and higher definition display and to be made even smaller, andaccordingly, a variety of measures other than those described above havebeen proposed. For example, when light is incident on a semiconductorlayer of a TFT, a light leakage current is generated, which deterioratesthe display quality. In order to prevent this, a light shielding layeris provided in the vicinity of the semiconductor layer. Further, eventhough the capacitance of a storage capacitor is preferably as large aspossible, it is desirable to design the storage capacitor so that thepixel aperture ratio is not sacrificed. Furthermore, it is preferablethat those various circuit elements be integrated on a substrate in ahigh density so as to make the device small.

On the other hand, there has been proposed various techniques forimproving the device performance or the manufacturing yield by payingattention to the shape of an electronic element, such as a storagecapacitor, and a method of manufacturing the same in the electro-opticaldevice (for example, see JP-A-6-3703 and JP-A-7-49508).

However, according to the above-mentioned various techniques of therelated art, as the function or performance of the electro-opticaldevice is improved, a stacked structure on a substrate becomes basicallycomplicated. This also causes the manufacturing method to be complicatedand the manufacturing yield to be lowered. In contrast, in order tosimplify the stacked structure or a manufacturing process, there is atechnical problem in that the display quality may be deterioratedbecause the light-shielding performance is lowered or an image signal isdeteriorated due to pixel electrodes and parasitic capacitors locatedbelow the pixel electrodes.

SUMMARY

An advantage of some aspects of the invention is that it provides anelectro-optical device, which is suitable for simplifying a stackedstructure or a manufacturing process and can perform high-qualitydisplay, a method of manufacturing the electro-optical device, and anelectronic apparatus having the electro-optical device.

According to a first aspect of the invention, an electro-optical deviceincludes: a substrate; data lines and scanning lines extending to crosseach other on the substrate; thin film transistors disposed below thedata lines on the substrate; storage capacitors each of which isdisposed in a region including a region facing a channel region of eachof the thin film transistors in plan view above the substrate and isdisposed above each of the data lines, each of the storage capacitorsbeing formed by stacking a fixed-potential-side electrode, a dielectricfilm, and a pixel-potential-side electrode in this order from below; andpixel electrodes that are disposed for respective pixels defined incorrespondence with the data lines and the scanning lines in plan viewabove the substrate and are disposed above the storage capacitors, eachof the pixel electrodes being electrically connected to thepixel-potential-side electrode and each of the thin film transistors. Atleast one of the fixed-potential-side electrode and thepixel-potential-side electrode includes a first conductive lightshielding film.

In the electro-optical device of the invention, the thin filmtransistors apply data signals, which are supplied from the data lines,to the pixel electrodes located at the pixels selected by the scanninglines while the electro-optical device is operated, and thus it ispossible to drive the electro-optical device in the active matrixdriving method. At this time, the storage capacitors enable the electricpotential holding characteristic in the pixel electrodes to be improvedand enable a high-contrast display.

In particular, in the electro-optical device, each of the storagecapacitors, which is disposed above each of the data lines and isdisposed in the region including a region facing the channel region,includes the first conductive light shielding film on at least one ofthe fixed-potential-side electrode and the pixel-potential-sideelectrode. Accordingly, due to the storage capacitor which can bedisposed above the data line through the interlayer insulating filminterposed therebetween so as to be adjacent to the data line, thechannel region of the thin film transistor can be reliably shielded fromthe light incident from above. As a result, during the operationdescribed above, it is possible to reduce an optical leakage currentgenerated in the thin film transistor and to improve the contrast ratio,which enables the high-quality image display.

On the other hand, the pixel electrodes are disposed above the storagecapacitors for the respective pixels. Here, since thepixel-potential-side electrode of the storage capacitor is below thepixel electrode with an interlayer insulating film interposedtherebetween, the electric potential of a conductive film locatedimmediately below the pixel electrode becomes the electric potential ofthe pixel. Therefore, while the liquid crystal device is operated, theelectric potential of the pixel is not affected by the parasiticcapacitance between the pixel electrode and the conductive film locatedtherebelow.

In addition, such advantages on the light shielding property and theparasitic capacitance can be obtained by using a relatively simpleconstruction in which the thin film transistors, the data lines, thestorage capacitors, and the pixel electrodes are stacked on thesubstrate in this order with interlayer insulating films interposedtherebetween.

As such, it is possible to simplify a stacked structure on a substrateand to reduce the adverse effect due to the optical leakage current andthe parasitic capacitance caused by the pixel electrodes, which enablesthe high-quality image display. In addition, the simplification of thestacked structure on the substrate causes the manufacturing process tobe simplified and the manufacturing yield to be improved.

In the electro-optical device of the invention, preferably, the thinfilm transistors correspond to intersections of the data lines and thescanning lines in plan view and are disposed such that the channelregion is at least partially covered by each of the data lines in planview.

According to the configuration described above, the channel region ofeach of the thin film transistors is at least partially covered by eachof the data lines disposed thereabove, and each of the data linesincludes the second conductive light shielding film. Therefore, due tothe data line which can be disposed to be adjacent to the channelregion, the channel region of the thin film transistor can be morereliably shielded from the light incident from above. As a result,during the operation described above, it is possible to reduce anoptical leakage current generated in the thin film transistor and toimprove the contrast ratio, which enables the high-quality imagedisplay.

Further, in the electro-optical device of the invention, preferably,each of the scanning lines is disposed in a region including a regionfacing the channel region in plan view above the substrate, is disposedbelow each of the thin film transistors on the substrate, is connectedto a gate of each of the thin film transistors through a contact hole,and includes a third conductive light shielding film.

According to the configuration described above, each of the scanninglines disposed below each of the thin film transistors so as to includethe region facing the channel region includes the third conductive lightshielding film. For this reason, even with respect to returned light,such as light reflected from a rear surface of a substrate or lightwhich is generated in another liquid crystal device and passes through acomposite optical system in a double plate projector, it is possible toshield the channel region from below by using the scanning line. As aresult, the channel region of the thin film transistor can be reliablyshielded from both the light incident from above and the light returnedfrom below.

In addition, each of the scanning lines is connected to the gate of eachof the thin film transistors through the contact hole. Here, the‘contact hole’ refers to a hole passing through an interlayer insulatingfilm in the thickness direction thereof so as to electrically connectconductive layers formed above and below the interlayer insulating filmto each other. For example, there is a case in which an upper conductivelayer becomes located inside the hole so as to be in contact with alower conductive layer (that is, in a case of being formed as aso-called contact hole) or a case in which one end of the hole is incontact with the upper conductive layer and the other end thereof is incontact with the lower conductive layer by burying a conductive materialinside the hole (that is, in a case of being formed as a plug).

Furthermore, in the electro-optical device of the invention, preferably,an interlayer insulating film subjected to a planarization process isstacked at least one of between the scanning lines and the thin filmtransistors, between the thin film transistors and the data lines,between the data lines and the storage capacitors, and between thestorage capacitors and the pixel electrodes.

According to the configuration described above, the thin filmtransistors, the data lines, the storage capacitors, and the pixelelectrodes are stacked on the substrate in this order with interlayerinsulating films interposed therebetween. On a surface of each of theinterlayer insulating films immediately after being stacked, unevennessis generated due to the components. Thus, by removing the unevenness byusing, for example, a CMP (chemical mechanical polishing) process or apolishing process, a spin coat process, and a planarizing process, suchas a burying process with respect to recessed portions. the surface ofeach of the interlayer insulating films becomes planarized. For example,in the case in which an electro-optical material is interposed between asubstrate having the above-described stacked structure and a countersubstrate facing the substrate, since a surface of the substrate isflat, it is possible to reduce the possibility that the alignment stateof the electro-optical material will be out of order, which makes itpossible to perform even higher quality display. Further, it ispreferable that the planarization process be performed on surfaces ofall of the interlayer insulating films. However, even if theplanarization process is performed on one of the surfaces of theinterlayer insulating films, it is possible to reduce the possibilitythat the alignment state of the electro-optical material will be out oforder because the surface of the substrate is flatter to some extentthan that in a case in which the planarization process is not performed.

Furthermore, in the electro-optical device of the invention, preferably,the dielectric film is formed in non-opening regions located betweenopening regions of the respective pixels in plan view above thesubstrate.

According to the configuration described above, the dielectric film isformed in the non-opening regions. In other words, the dielectric filmcan rarely or never be formed in the opening regions. Therefore, even ifthe dielectric film is an opaque film, the transmittance of light in theopening regions is not lowered. Thus, it is not necessary to considerthe transmittance of the dielectric film of the capacitor, andaccordingly, it is possible to use, for example, a silicon nitride filmhaving high permittivity as the dielectric film.

For this reason, the dielectric film can also serve as a film forpreventing moisture or humidity, which increases water resistance andmoisture resistance.

Furthermore, in the electro-optical device of the invention, preferably,a conductive film is formed on a surface of each of the data linesfacing the channel region, the conductive film having lower reflectivitythan a conductive film forming a main body of each of the data lines.

According to the configuration described above, it is possible toprevent returned light from being reflected from the surface of the dataline facing the channel region, that is, a lower surface of the dataline, the returned light including light reflected from a rear surfaceof a substrate or light which is generated in another liquid crystaldevice and passes through a composite optical system in a double plateprojector. As a result, the effect of light with respect to the channelregion can be reduced. The data line can be obtained by forming a metalhaving lower reflectivity than the aluminum film forming the main bodyof the data line, or a barrier metal on the surface of the data linefacing the channel region, that is, the lower surface of the data line.

Further, in the electro-optical device of the invention, preferably, anedge of the fixed-potential-side electrode facing at least thepixel-potential-side electrode with the dielectric film interposedtherebetween is formed with a taper.

According to the configuration described above, by forming the taper,the distance between the fixed-potential-side electrode and thepixel-potential-side electrode in the vicinity of the edge is largerthan that in a case where the taper is not formed. As a result, it ispossible to reduce the possibility of being short-circuited due tomanufacturing defects in the vicinity of the edge or to reduce thepossibility that defects due to concentrated electric field will occurin the vicinity of the edge.

Furthermore, in the electro-optical device of the invention, preferably,the pixel-potential-side electrode is formed in a region included in aregion where the fixed-potential-side electrode is formed, in plan viewabove the substrate.

According to the configuration described above, since thepixel-potential-side electrode is not formed in the vicinity of the edgeof the fixed-potential-side electrode with the dielectric filminterposed therebetween, it is possible to reduce the possibility ofbeing short-circuited due to manufacturing defects in the vicinity ofthe edge or to reduce the possibility that defects due to concentratedelectric field will occur in the vicinity of the edge.

Furthermore, in the electro-optical device of the invention, preferably,a relay layer that is formed on the substrate by using a conductive filmlocated at the same layer as the data lines and relay-connects thepixel-potential-side electrode and a drain of each of the thin filmtransistors is further included.

According to the configuration described above, the pixel-potential-sideelectrode and the drain of the thin film transistor are electricallyconnected, that is, relay-connected to each other through the relaylayer. The pixel-potential-side electrode and the relay layer areconnected to each other, for example, through a contact hole passingthrough an interlayer insulating film interposed therebetween, and therelay layer and the thin film transistor are connected to each other,for example, through a contact hole passing through an interlayerinsulating film interposed therebetween. As a result, it is possible toavoid difficulty in making a connection between the pixel-potential-sideelectrode and the drain with one contact hole because the interlayerdistance therebetween is long. In particular, since the data line andthe relay layer are formed by using a conductive film located at thesame layer, the stacked structure and the manufacturing process do notbecome complicated. In addition, since the relay layer and the datalines are formed by using the second conductive light shielding film,there is little possibility that the relay layer will cause the lightshielding performance to be deteriorated.

Furthermore, in the electro-optical device of the invention, preferably,each of the pixel electrodes is electrically connected to the relaylayer through an extending portion of the pixel-potential-sideelectrode.

According to the configuration described above, the pixel electrode andthe relay layer are electrically connected to each other through theextending portion of the pixel-potential-side electrode. That is, thepixel electrode and the extending portion are connected to each other,for example, through a contact hole passing through an interlayerinsulating film interposed therebetween, and the extending portion andthe relay layer are connected to each other, for example, through acontact hole passing through an interlayer insulating film interposedtherebetween. As a result, it is possible to avoid difficulty in makinga connection between each of the pixel electrodes and the drain with onecontact hole because the interlayer distance therebetween is long. Inaddition, the stacked structure and the manufacturing process do notbecome complicated. Moreover, it is possible to easily make theconnection by not providing the fixed-potential-side electrode at aplace where the extending portion and the relay layer are connected toeach other in plan view, that is, a place where, for example, a contacthole is formed.

According to a second aspect of the invention, an electronic apparatusincludes the above-described electro-optical device. Thereby, it ispossible to implement various electronic apparatuses capable ofperforming high-quality image display, such as a television, a mobilephone, an electronic organizer, a word processor, a viewfinder-type ormonitor-direct-view-type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel, as well as an image formingapparatus using the electro-optical device as an exposure head, such asa printer, a copying machine, and a facsimile. In addition, for example,an electrophoretic device, such as an electronic paper, and an electronemission device (field emission display and conduction electron-emitterdisplay) may be implemented as the electronic apparatus according to theinvention.

According to a third aspect of the invention, a method of manufacturingan electro-optical device including a substrate, data lines and scanninglines extending to cross each other on the substrate, top-gate-type thinfilm transistors disposed below the data lines, storage capacitorsdisposed above the data lines, and pixel electrodes disposed above thestorage capacitors includes: forming the thin film transistors inregions corresponding to intersections of the data lines and thescanning lines on the substrate in plan view; forming the data linesabove the thin film transistors; forming each of the storage capacitorsin a region including a region facing a channel region of each of thethin film transistors in plan view above the substrate, such that afixed-potential-side electrode, a dielectric film, and apixel-potential-side electrode are stacked above the data lines in thisorder and at least one of the fixed-potential-side electrode and thepixel-potential-side electrode includes a first conductive lightshielding film; and forming each of the pixel electrodes on each of thestorage capacitors so as to be electrically connected to each of thethin film transistors and the pixel-potential-side electrode forrespective pixels defined in correspondence with the data lines and thescanning lines in plan view above the substrate.

According to the method, it is possible to manufacture theelectro-optical device according to the invention. In particular, sincethe stacked structure on the substrate is relatively simple, it ispossible to simplify the manufacturing process and to improve themanufacturing yield.

In the method described above, preferably, forming each of the storagecapacitors includes forming a taper at an edge of thefixed-potential-side electrode facing at least the pixel-potential-sideelectrode with the dielectric film interposed therebetween by using atleast one of wet etching, plasma etching, and O₂ cleaning processes.

According to the configuration, it is possible to relatively easily formthe taper at the fixed-potential-side electrode by using at least one ofwet etching, plasma etching, and O₂ cleaning processes. Thereby, in asubsequent manufacturing process, it is possible to reduce thepossibility that defects will occur in the vicinity of the edge of thefixed-potential-side electrode or to reduce the possibility that defectsdue to concentrated electric field will occur in the vicinity of theedge. Moreover, in addition to forming the taper, forming thepixel-potential-side electrode in a region smaller than thefixed-potential-side electrode in plan view above the substrate may beincluded.

Such effects and other advantages of the invention will be apparent fromthe following embodiments to be described below.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a plan view illustrating the overall configuration of a liquidcrystal device according to a first embodiment of the invention.

FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1.

FIG. 3 is an equivalent circuit diagram illustrating various elements,wiring lines, and the like in a plurality of pixels.

FIG. 4 is a plan view illustrating a pixel group on a TFT arraysubstrate according to the first embodiment, in which only aconfiguration of lower layer parts (lower layer parts located up toreference numeral ‘6 a’ (data line) in FIG. 7) is shown.

FIG. 5 is a plan view illustrating the pixel group on the TFT arraysubstrate according to the first embodiment, in which only aconfiguration of upper layer parts (upper layer parts located above thereference numeral ‘6 a’ (data line) in FIG. 7) is shown.

FIG. 6 is a plan view illustrating a case in which FIGS. 4 and 5 overlapeach other, in which a portion is enlarged.

FIG. 7 is a cross-sectional view taken along the line VII-VII when FIGS.4 and 5 overlap each other.

FIG. 8 is a cross-sectional view illustrating a method of manufacturingthe liquid crystal device according to the first embodiment in the order(first process).

FIG. 9 is a cross-sectional view illustrating the method ofmanufacturing the liquid crystal device according to the firstembodiment in the order (second process).

FIG. 10 is a cross-sectional view illustrating the method ofmanufacturing the liquid crystal device according to the firstembodiment in the order (third process).

FIG. 11 is a cross-sectional view illustrating the method ofmanufacturing the liquid crystal device according to the firstembodiment in the order (fourth process).

FIG. 12 is a cross-sectional view illustrating the method ofmanufacturing the liquid crystal device according to the firstembodiment in the order (fifth process).

FIG. 13 is a plan view illustrating the configuration of a projector,which is an example of an electronic apparatus, to which anelectro-optical device is applied.

FIG. 14 is a plan view illustrating the configuration of a personalcomputer, which is an example of an electronic apparatus, to which theelectro-optical device is applied.

FIG. 15 is a plan view illustrating the configuration of a mobile phone,which is an example of an electronic apparatus, to which anelectro-optical device is applied.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, embodiments of the invention will be described withreference to the accompanying drawings. In the embodiments to bedescribed below, a TFT-active-matrix-driving-type liquid crystal devicehaving a built-in driving circuit, which is an example of anelectro-optical device of the invention, will be exemplified.

First Embodiment

A liquid crystal device according to a first embodiment of the inventionwill be described with reference to FIGS. 1 to 7.

Overall Configuration of Electro-Optical Device

First, referring to FIGS. 1 and 2, an overall configuration of theliquid crystal device according to the present embodiment will bedescribed. Here, FIG. 1 is a plan view illustrating the configuration ofthe liquid crystal device according to the present embodiment, and FIG.2 is a cross-sectional view taken along the line II-II of FIG. 1.

In the liquid crystal device according to the present embodiment shownin FIGS. 1 and 2, a TFT array substrate 10 and a counter substrate 20are disposed to face each other. A liquid crystal layer 50 is interposedbetween the TFT array substrate 10 and the counter substrate 20, and theTFT array substrate 10 and the counter substrate 20 are bonded to eachother by a sealant 52 provided in a sealed region located around animage display region 10 a.

In FIG. 1, a frame light-shielding film 53, which has a light-shieldingproperty and defines a frame region of the image display region 10 a, isprovided at the counter substrate 20 side so as to be parallel to innersides of the sealed region where the sealant 52 is disposed. In aperipheral region located outside the sealed region where the sealant 52is disposed, a data line driving circuit 101 and an external circuitconnection terminal 102 are provided along one side of the TFT arraysubstrate 10. A sampling circuit 7 is provided inwardly from the sealedregion located along the one side so as to be covered by the framelight-shielding film 53. Further, scanning line driving circuits 104 areprovided inwardly from the sealed region located along two sidesadjacent to the one side, so as to be covered by the framelight-shielding film 53. In addition, on the TFT array substrate 10,upper and lower conducting terminals 106, which connect the twosubstrates to each other with upper and lower conducting members 107,are provided at regions opposite to four corners of the countersubstrate 20. Thereby, the electrical conduction between the TFT arraysubstrate 10 and the counter substrate 20 can be made.

On the TFT array substrate 10, wiring lines 90 are formed toelectrically connect the external circuit connection terminal 102, thedata line driving circuit 101, the scanning line driving circuit 104,the upper and lower conducting terminals 106, and the like to oneanother.

In FIG. 2, on the TFT array substrate 10, a stacked structure is formedin which pixel switching TFTs serving as driving elements and the wiringlines, such as scanning lines and data lines, are formed. In the imagedisplay region 10 a, pixel electrodes 9 a are provided above the pixelswitching TFTs and the wiring lines, such as the scanning lines and thedata lines. On the other hand, a light shielding film 23 is provided onthe counter substrate 20 facing the TFT array substrate 10. In addition,counter electrodes 21 made of a transparent material, such as an ITO, isformed on the light shielding film 23 so as to face a plurality of pixelelectrodes 9 a.

Further, in addition to the data line driving circuit 101 and thescanning line driving circuit 104, a test circuit or a test pattern totest the quality and defects of the liquid crystal device during themanufacturing process or at the time of shipping may be formed on theTFT array substrate 10.

Configuration of Image Display Region

Next, a configuration of a pixel unit of the liquid crystal deviceaccording to the present embodiment will be described with reference toFIGS. 3 to 7. Here, FIG. 3 is an equivalent circuit diagram illustratingvarious elements, wiring lines, and so on, in a plurality of pixelswhich are formed in a matrix and form an image display region of theliquid crystal device. FIGS. 4 to 6 are plan views illustrating apartial configuration of the pixel unit on the TFT array substrate.FIGS. 4 and 5 correspond to lower and upper portions of a stackedstructure to be described below, respectively. FIG. 6 is a plan viewillustrating an enlarged stacked structure, where FIGS. 4 and 5 overlapeach other. FIG. 7 is a cross-sectional view taken along the lineVII-VII when FIGS. 4 and 5 overlap each other. In addition, in FIG. 7,the scale of each layer or member is adjusted in order to have arecognizable size in the drawings.

Principal Configuration of Pixel Unit

Referring to FIG. 3, each of a plurality of pixels, which forms theimage display region of the liquid crystal device according to thepresent embodiment and is formed in a matrix, is provided with a pixelelectrode 9 a and a TFT 30 for controlling a switching operation of thepixel electrode 9 a, and a corresponding data line 6 a to which an imagesignal is supplied is electrically connected to a source of the TFT 30.Image signals S1, S2, . . . , and Sn may be supplied to the data lines 6a in a line-sequential manner in this order, or may be supplied to eachgroup composed of the plurality of data lines 6 a adjacent to eachother.

Further, scanning lines 11 a are electrically connected to gates of theTFTs 30, and scanning signals G1, G2, . . . , and Gm are applied to thescanning lines 11 a in a pulsed manner and line-sequentially in thisorder at predetermined timings. The pixel electrodes 9 a areelectrically connected to drains of the TFTs 30, and image signals S1,S2, . . . , and Sn supplied from the data lines 6 a are written into thepixel electrodes 9 a at predetermined timings by switching on the TFTs30 serving as switching elements for a predetermined period of time.

The image signals S1, S2, . . . , and Sn having predetermined levels,written into liquid crystal, which is an example of an electro-opticalmaterial, through the pixel electrodes 9 a, are held between the pixelelectrodes 9 a and counter electrodes formed on the counter substratefor a predetermined period of time. In the liquid crystal, the alignmentor order of a molecule group varies according to the voltage level beingapplied, and thus it is possible to modulate light and to performgray-scale display. In a normally white mode, the transmittance withrespect to the incident light decreases according to the voltage appliedin a unit of each pixel, while in a normally black mode, thetransmittance with respect to the incident light increases according tothe voltage applied in the unit of each pixel. Therefore, as a whole,light having a contrast according to an image signal is emitted from theliquid crystal device.

In order to prevent the held image signals from leaking, a storagecapacitor 70 is provided parallel to a liquid crystal capacitor formedbetween the pixel electrode 9 a and the counter electrode. One electrodeof the storage capacitor 70 is connected to the drain of the TFT so asto be parallel to the pixel electrode 9 a, and the other electrodethereof is connected to a capacitive wiring line 400, having a fixedelectric potential, so as to have a constant electric potential.

Specific Configuration of Pixel Unit

Next, a specific configuration of a pixel unit realizing theabove-described operations will be described with reference to FIGS. 4to 7.

In FIGS. 4 to 7, the respective circuit elements of the pixel unit arepatterned to be formed on the TFT array substrate 10 as stackedconductive films. The TFT array substrate 10 is composed of, forexample, a glass substrate, a quartz substrate, an SOI substrate, or asemiconductor substrate, and the TFT array substrate 10 is disposed toface the counter substrate 20 composed of, for example, the glasssubstrate or the quartz substrate. Further, each of the circuit elementsis composed of a first layer including the scanning line 11 a, a secondlayer including the TFT 30, a third layer including the data line 6 a, afourth layer including a storage capacitor 70, and a fifth layerincluding the pixel electrode 9 a, in this order from below.Furthermore, a base insulating film 12 is provided between the first andsecond layers, a first interlayer insulating film 41 is provided betweenthe second and third layers, a second interlayer insulating film 42 isprovided between the third and fourth layers, and a third interlayerinsulating film 43 is provided between the fourth and fifth layers.Thereby, the respective elements described above are prevented frombeing short-circuited. Here, the first to third layers are shown aslower layers in FIG. 4, and the fourth and fifth layers are shown asupper layers in FIG. 5.

Configuration of First Layer—Scanning Line, Etc.

The first layer includes the scanning lines 11 a. Each of the scanninglines 11 a is patterned to have a shape composed of a main line partextending in the X direction of FIG. 4 and a protruding part extendingin the Y direction of FIG. 4 in which the data lines 6 a extend. Thescanning line 11 a is an example of a ‘third conductive light shieldingfilm’ according to the invention, and is made of, for example,conductive polysilicon. Alternatively, the scanning line 11 a may bemade of a metal simplex including at least one high-melting-point metalselected from a group of titanium (Ti), chromium (Cr), tungsten (W),tantalum (Ta), molybdenum (Mo), and the like, an alloy thereof, metalsilicide, polysilicide, or a laminate thereof.

Particular in the present embodiment, the scanning line 11 a is disposedbelow the TFT 30 so as to cover a region facing a channel region 1 a′and is composed of a conductive film. For this reason, even with respectto returned light, such as light reflected from a rear surface of theTFT array substrate 10 or light which is generated in another liquidcrystal device and passes through a composite optical system, such as aprism, when a double plate projector is constructed by using a liquidcrystal device as a light valve, it is possible to shield the channelregion 1 a′ from below by using the scanning line 11 a.

Configuration of Second Layer—TFT, Etc.

The second layer includes the TFTs 30. Each of the TFTs 30 has an LDD(Lightly Doped Drain) structure, for example, and includes a gateelectrode 3 a, a semiconductor layer 1 a, and an insulating film 2including a gate insulating film for insulating the gate electrode 3 afrom the semiconductor layer 1 a. The gate electrode 3 a is made of, forexample, conductive polysilicon. The semiconductor layer 1 a is made of,for example, polysilicon, and includes the channel region 1 a′, alightly-doped source region 1 b, a lightly-doped drain region 1 c, aheavily-doped source region 1 d, and a heavily-doped drain region 1 e.In addition, the TFT 30 preferably has the LDD structure; however, theTFT 30 may have an offset structure in which impurities are not injectedinto the lightly-doped source region 1 b and the lightly-doped drainregion 1 c or have a self-aligning structure in which the heavily-dopedsource region 1 d and the heavily-doped drain region 1 e are formed byinjecting heavily-doped impurities with the gate electrode 3 a as amask.

A part 3 b of the gate electrode 3 a of the TFT 30 is electricallyconnected to the scanning line 11 a through a contact hole 12 cv formedin the base insulating film 12. The base insulating film 12 is made of,for example, a silicon oxide film, electrically isolates the first layerfrom the second layer, and is formed on the entire surface of the TFTarray substrate 10 so as to prevent element characteristics of the TFT30 from changing due to roughness or contamination caused by theabrasion of a substrate surface.

Further, the TFT 30 according to the present embodiment is a top gatetype TFT. However, the TFT 30 may be a bottom gate type TFT.

Configuration of Third Layer—Data Line, Etc.

The third layer includes the data lines 6 a and a relay layer 600.

Each of the data lines 6 a is an example of a ‘second conductive lightshielding film’ according to the invention, and has a three-layeredstructure composed of an aluminum film, a titanium nitride film, and asilicon nitride film in this order from below. The data line 6 a isformed to partially cover the channel region 1 a′ of the TFT 30.Accordingly, by using the data line 6 a which can be disposed to beadjacent to the channel region 1 a′, the channel region 1 a′ of the TFT30 can be shielded from light incident from above. In addition, the dataline 6 a is electrically connected to the heavily-doped source region 1d of the TFT 30 through a contact hole 81 passing through the firstinterlayer insulating film 41.

In a modified example of the present embodiment, on a surface of thedata line 6 a facing the channel region 1 a′, another conductive filmhaving lower reflectivity than a conductive film, such as an aluminumfilm forming a main body of the data line 6 a, may be formed. Accordingto the modified example, it is possible to prevent that theabove-mentioned returned light is reflected from the surface of the dataline 6 a facing the channel region 1 a′, that is, a lower surface of thedata line 6 a, and thus multiplexed reflection light or stray light isgenerated. As a result, the effect of light with respect to the channelregion 1 a′ can be reduced. The data line 6 a can be obtained byproviding a metal having lower reflectivity than the aluminum filmforming the main body of the data line 6 a, or a barrier metal on thesurface of the data line 6 a facing the channel region 1 a′, that is, alower surface of the data line 6 a. Further, the metal having lowerreflectivity than the aluminum film or the barrier metal includeschromium (Cr), titanium (Ti), titanium nitride (TiN), tungsten (W), andso on.

The relay layer 600 is formed as the same film as the data lines 6 a.The relay layer 600 and the data lines 6 a are formed to be separatedfrom each other, as shown in FIG. 4. Further, the relay layer 600 iselectrically connected to the heavily-doped drain region 1 e of the TFT30 through a contact hole 83 passing through the first interlayerinsulating film 41.

The first interlayer insulating film 41 is made of, for example, NSG(non-silicate glass). Alternatively, the first interlayer insulatingfilm 41 may be made of silicate glass, such as PSG (phosphorus silicateglass), BSG (boron silicate glass), or BPSG (boron phosphorus silicateglass), a silicon nitride, a silicon oxide, or the like.

Configuration of Fourth Layer—Fixed-Potential-Side Electrode, Etc.

The fourth layer includes the storage capacitor 70. The storagecapacitor 70 is configured such that a capacitive electrode 300 and alower electrode 71 are disposed to be opposite with a dielectric film 75interposed therebetween. Here, the capacitive electrode 300 is anexample of a ‘pixel-potential-side electrode’ according to theinvention, and the lower electrode 71 is an example of a‘fixed-potential-side electrode’ according to the invention. Anextending portion of the capacitive electrode 300 is electricallyconnected to the relay layer 600 through a contact hole 84 passingthrough the second interlayer insulating film 42.

The capacitive electrode 300 or the lower electrode 71 is an example ofa ‘first conductive light shielding film’ according to the invention andis made of, for example, a metal simplex including at least onehigh-melting-point metal selected from a group of Ti, Cr, W, Ta, Mo, andthe like, an alloy thereof, metal silicide, polysilicide, or a laminatethereof. Preferably, the capacitive electrode 300 or the lower electrode71 is made of tungsten silicide. Accordingly, by using the storagecapacitor 70 which can be disposed to be adjacent to the data line 6 athrough the interlayer insulating film 42 interposed therebetween, thechannel region 1 a′ of the TFT 30 can be more reliably shielded from thelight incident from the upper layer side.

Further, the edge of the lower electrode 71 facing the capacitiveelectrode 300 with the dielectric film 75 interposed therebetween isformed with a taper (refer to a circle C1 in FIG. 7). Thereby, thedistance between the lower electrode 71 and the capacitive electrode 300in the vicinity of the edge is larger than that in a case where thetaper is not formed. As a result, it is possible to reduce thepossibility of being short-circuited due to manufacturing defects in thevicinity of the edge or to reduce the possibility that defects due toconcentrated electric field will occur in the vicinity of the edge.

Furthermore, as shown in FIG. 5, the capacitive electrode 300 is formedin a region smaller than the lower electrode 71 in plan view above theTFT array substrate 10. That is, since the capacitive electrode 300 isnot formed in the vicinity of the edge of the lower electrode 71 withthe dielectric film 75 interposed therebetween, it is possible to reducethe possibility of being short-circuited due to manufacturing defects inthe vicinity of the edge or to reduce the possibility that defects dueto concentrated electric field will occur in the vicinity of the edge.

As shown in FIG. 5, the dielectric film 75 is formed in non-openingregions, which are located between opening regions of pixels, in planview above the TFT array substrate 10. That is, the dielectric film 75is rarely formed in the opening regions. Thus, even if the dielectricfilm 75 is an opaque film, the transmittance of light in the openingregions is not lowered. Accordingly, the dielectric film 75 can beformed by using, for example, a silicon nitride film having highpermittivity, without considering the transmittance. For this reason,the dielectric film 75 can also serve as a film for preventing moistureor humidity, which can increase water resistance and moistureresistance. Moreover, as a dielectric film, it is possible to use asingle-layered film or a multi-layered film made of, for example,hafnium oxide (HfO₂), alumina (Al₂O₃), tantalum oxide (Ta₂O₅), inaddition to the silicon nitride film.

The second interlayer insulating film 42 is made of, for example, NSG.Alternatively, the second interlayer insulating film 42 may be made ofsilicate glass, such as PSG, BSG, or BPSG, a silicon nitride, a siliconoxide, or the like. A surface of the second interlayer insulating film42 is subjected to a CMP (chemical mechanical polishing) process or apolishing process, a spin coat process, and a planarizing process, suchas a burying process with respect to recessed portions. Thereby,unevenness of the lower layers due to the parts described above isremoved, so that the surface of the second interlayer insulating film 42becomes planarized. As such, it is possible to reduce the possibilitythat the alignment state of the liquid crystal layer 50 interposedbetween the TFT array substrate 10 and the counter substrate 20 will beout of order, which makes it possible to perform even higher qualitydisplay. Further, the planarization process may be performed on surfacesof the other interlayer insulating films.

Configuration of Fifth Layer—Pixel Electrode, Etc.

The third interlayer insulating film 43 is formed on the entire surfaceof the fourth layer, and the pixel electrodes 9 a are formed thereon asthe fifth layer. The third interlayer insulating film 43 is made of, forexample, NSG. In addition, the third interlayer insulating film 43 maybe made of silicate glass, such as PSG, BSG, BPSG, or the like, siliconnitride, silicon oxide, or the like. A surface of the third interlayerinsulating film 43 is subjected to a planarization process such as theCMP process, in the same manner as the second interlayer insulating film42.

The pixel electrodes 9 a (an outline of each of the pixel electrodes 9 ais shown by a dotted line 9 a′ in FIG. 5) are respectively disposed inthe pixel regions which are arranged to be partitioned horizontally andvertically, and the data lines 6 a and the scanning lines 11 a areformed on boundaries therebetween so as to be arranged in a matrix (seeFIGS. 4 and 5). Further, the pixel electrode 9 a is composed of atransparent conductive film, such as ITO (indium tin oxide).

The pixel electrode 9 a is electrically connected to an extendingportion of the pixel-potential-side electrode 300 through a contact hole85 passing through the third interlayer insulating film 43 (see FIG. 7).The electric potential of the capacitive electrode 300, which is aconductive film located immediately below the pixel electrode 9 a,becomes the electric potential of the pixel. Therefore, while the liquidcrystal device is operated, the electric potential of the pixel is notaffected by the parasitic capacitance between the pixel electrode 9 aand the conductive film located therebelow.

Further, as described above, the extending portion of the capacitiveelectrode 300 and the relay layer 600 are electrically connected to eachother through the contact hole 84, and the relay layer 600 and theheavily-doped drain region 1 e of the TFT 30 are electrically connectedto each other through the contact hole 83. That is, the pixel electrode9 a and the heavily-doped drain region 1 e of the TFT 30 arerelay-connected to each other through the relay layer 600 and theextending portion of the capacitive electrode 300. Thereby, it ispossible to avoid difficulty in making a connection between a pixelelectrode and a drain with one contact hole because the interlayerdistance therebetween is long. In addition, the stacked structure andthe manufacturing process do not become complicated.

On the pixel electrodes 9 a, an alignment film 16 subjected to apredetermined alignment process, such as a rubbing process, is provided.

Until now, the configuration of the pixel unit at the TFT arraysubstrate 10 side has been described.

On the other hand, for the counter substrate 20, the counter electrode21 is provided on the entire surface thereof facing the TFT arraysubstrate 10, and an alignment film 22 is formed thereon (below thecounter electrode 21 in FIG. 7). The counter electrode 21 is made of,for example, a transparent conductive film, such as ITO, in the samemanner as the pixel electrode 9 a. Between the counter substrate 20 andthe counter electrode 21, a light-shielding film 23 for covering atleast a region facing the TFT 30 is provided to prevent optical leakagecurrent from being generated in the TFT 30.

Between the TFT array substrate 10 and the counter substrate 20constructed above, the liquid crystal layer 50 is provided. The liquidcrystal layer 50 is formed by injecting liquid crystal into a spaceformed by sealing the peripheral portions of the substrates 10 and 20with sealant. The liquid crystal layer 50 has a predetermined alignmentstate by the alignment films 16 and 22 subjected to an alignmentprocess, such as a rubbing process, in a condition in which an electricfield is not applied between the pixel electrode 9 a and the counterelectrode 21.

The construction of the pixel unit described above is commonly appliedto the respective pixel units, as shown in FIGS. 4 and 5. In theabove-mentioned image display region 10 a (refer to FIG. 1), the pixelunits are periodically formed. Meanwhile, in the liquid crystal device,driving circuits, such as the scanning line driving circuit 104 and thedata line driving circuit 101, are formed in the peripheral regionslocated in the vicinity of the image display region 10 a, as describedabove with reference to FIGS. 1 and 2.

Manufacturing Method

Next, a method of manufacturing the electro-optical device will bedescribed with reference to FIGS. 8 to 12. FIGS. 8 to 12 are processviews illustrating the stacked structure of the electro-optical devicein each manufacturing process, in the stacking order of the crosssection corresponding to FIG. 7. Here, it will be described aboutprocesses of forming a scanning line, a TFT, a data line, a storagecapacitor, and a pixel electrode, which are main components of theliquid crystal device in the present embodiment.

First, as shown in FIG. 9, the respective layers from the scanning line11 a to the first interlayer insulating film 41 are formed to be stackedon the TFT array substrate 10. At this time, the TFT 30 is formed in aregion corresponding to an intersection of the scanning line 11 a andthe data line 6 a to be formed later. In each process, a typicalsemiconductor integration technique can be utilized. Further, after thefirst interlayer insulating film 41 is formed, a surface of the firstinterlayer insulating film 41 may be planarized by performing the CMPprocess or the like.

Thereafter, referring to the process shown in FIG. 9, predeterminedportions of the first interlayer insulating film 41 are etched to formthe contact hole 81 and the contact hole 83, the contact hole 81 havinga depth reaching the heavily-doped source region 1 d and the contacthole 83 reaching the heavily-doped drain region 1 e. Then, a conductivelight shielding film is stacked in a predetermined pattern and the dataline 6 a and the relay layer 600 are formed. The data line 6 a is formedto partially cover the channel region 1 a′ of the TFT 30. In addition,the data line 6 a and the heavily-doped source region 1 d are connectedto each other through the contact hole 81. Alternatively, as amodification of the present embodiment, before the data line 6 a isformed, another conductive film having lower reflectivity than aconductive film, such as an aluminum film forming a main body of thedata line 6 a, may be formed on a surface of the data line 6 a facingthe channel region 1 a′. The relay layer 600 and the heavily-doped drainregion 1 e are connected to each other through the contact hole 83.Then, a precursory film 42 a of the second interlayer insulating film 42is formed over the entire surface of the TFT array substrate 10. On asurface of the precursory film 42 a, unevenness caused by the TFT 30,the data line 6 a, and the contact holes 81 and 83 located therebelow isgenerated. For this reason, the precursory film 42 a is formed to bethick, and then the precursory film 42 a is cut out to a dotted line inthe drawing by using the CMP process, for example, so as to planarizethe surface of the precursory film 42 a, thereby forming the secondinterlayer insulating film 42.

Thereafter, referring to the process shown in FIG. 10, a conductivelight shielding film is stacked on a predetermined region of the surfaceof the second interlayer insulating film 42, the predetermined regionincluding a region opposite to the channel region 1 a′, so as to formthe lower electrode 71. Then, a predetermined edge (refer to a circle C1in FIG. 10) of the lower electrode 71 is wet-etched to form the taper.Thereby, in a subsequent manufacturing process, it is possible to reducethe possibility that defects will occur in the vicinity of the edge ofthe lower electrode 71 or to reduce the possibility that defects due toconcentrated electric field will occur in the vicinity of the edge.Moreover, in order to form the taper, a plasma etching process or an O₂cleaning process may be performed in addition to or instead of thewet-etching process. As such, the taper can be relatively easily formed.

Subsequently, referring to the process shown in FIG. 11, the dielectricfilm 75 is formed in the non-opening regions of the TFT array substrate10. Then, a predetermined portion of the surface of the dielectric film75 is etched to form the contact hole 84 having a depth reaching therelay layer 600. Then, a conductive light shielding film is stacked on apredetermined region including a region opposite to the channel region 1a′, thereby forming the capacitive electrode 300. At this time, thecapacitive electrode 300 is formed in a region smaller than the lowerelectrode 71 in plan view above the TFT array substrate 10 (refer to acircle C2 in FIG. 11). Thereby, in subsequent process, it is possible toreduce the possibility that defects will occur in the vicinity of theedge of the lower electrode 71 or to reduce the possibility that defectsdue to concentrated electric field will occur in the vicinity of theedge. Then, a precursory film 43 a of the third interlayer insulatingfilm 43 is formed over the entire surface of the TFT array substrate 10.On a surface of the precursory film 43 a, unevenness caused by thecapacitive electrode 300, the contact hole 84, or the like is generated.For this reason, the precursory film 43 a is formed to be thick, andthen the precursory film 43 a is cut out to a dotted line in the drawingby using the CMP process, for example, so as to planarize the surface ofthe precursory film 43 a, thereby forming the third interlayerinsulating film 43.

Thereafter, referring to the process shown in FIG. 12, a predeterminedportion of the third interlayer insulating film 43 is etched to form thecontact hole 85 having a depth reaching the extending portion of thecapacitive electrode 300. Then, the pixel electrode 9 a is formed at apredetermined location of the surface of the third interlayer insulatingfilm 43. At this time, the pixel electrode 9 a is also formed inside thecontact hole 85. However, since the hole diameter of the contact hole 85is large, the pixel electrode 9 a is reliably formed.

According to the above-described method of manufacturing the liquidcrystal device, the liquid crystal device of the present embodimentdescribed above can be manufactured. Here, since the stacked structureon the TFT array substrate 10 is relatively simple, it is possible tosimplify the manufacturing process and to improve the manufacturingyield.

Electronic Apparatus

Next, cases in which the liquid crystal device, which is theabove-described electro-optical device, is applied to various electronicapparatuses will be described.

First, a projector which uses the liquid crystal device as a light valvewill be described. FIG. 13 is a plan view illustrating an example of aconfiguration of the projector. As shown in FIG. 13, a projector 1100includes a lamp unit 1102 composed of a white light source, such as ahalogen lamp. Projection light emitted from the lamp unit 1102 isseparated into light components having three primary colors of R (red),G (green), and B (blue) by four sheets of mirrors 1106 and two sheets ofdichroic mirrors 1108, and then the light components having the threeprimary colors are respectively incident on liquid crystal panels 1110R,1110B, and 1110G, serving as light valves, corresponding to therespective primary colors.

The configurations of the liquid crystal panels 1110R, 1110G, and 1110Bare the same as that of the above-described liquid crystal device, andthe liquid crystal panels 1110R, 1110B, and 1110G are respectivelydriven by R, G, and B primary color signals supplied from an imagesignal processing circuit. The light components modulated by the liquidcrystal panels 1110R, 1110B, and 1110G are incident on a dichroic prism1112 from the three directions. The dichroic prism 1112 causes the lightcomponents having the R and B colors to be refracted by 90° and thelight component having the G color to go straight. Then, images, eachhaving one of the light components for three primary colors, aresynthesized, such that a color image is projected onto a screen or thelike through a projection lens 1114.

Here, in display images formed on the respective liquid crystal panels1110R, 1110B, and 1110G, it is necessary that the display image formedon the liquid crystal panel 1110G be left and right inverted withrespect to the display image formed on the liquid crystal panels 1110Rand 1110B.

Further, since the light components corresponding to the primary colorsof R, G, and B are respectively incident on the liquid crystal panels1110R, 1110B, and 1110G by the dichroic mirrors 1108, it is notnecessary to prepare a color filter.

Next, a case in which the liquid crystal device is applied to a mobilepersonal computer will be described. FIG. 14 is a perspective viewillustrating the configuration of the personal computer. Referring toFIG. 14, a computer 1200 includes a main body unit 1204 having akeyboard 1202, and a liquid crystal display unit 1206. The liquidcrystal display unit 1206 is provided with a backlight on a rear surfaceof a liquid crystal device 1005 described above.

Further, a case in which the liquid crystal device is applied to amobile phone will be described. FIG. 15 is a perspective viewillustrating the configuration of the mobile phone. Referring to FIG.15, a mobile phone 1300 includes a plurality of operation buttons 1302and a reflective liquid crystal device 1005. The reflective liquidcrystal device 1005 may be provided with a frontlight on a front surfacethereof according to the necessity.

Furthermore, the electro-optical device can be applied to variouselectronic apparatuses, such as a liquid crystal television, aviewfinder-type or monitor-direct-view-type video tape recorder, a carnavigation device, a pager, an electronic organizer, an electroniccalculator, a word processor, a workstation, a video phone, a POSterminal, a device having a touch panel, and the like, in addition tothe electronic apparatuses described above with reference to FIGS. 13 to15.

Furthermore, the invention can be implemented as an LCOS (liquid crystalon silicon) device in which elements are formed on a silicon substrate,a plasma display panel (PDP), field emission type display devices (FED,SED), an organic EL display device, and the like, in addition to theliquid crystal device described in the above embodiments.

It should be understood that the invention is not limited to theabove-described embodiments, but various modifications can be madewithin the scope without departing from the subject matter or spirit ofthe invention defined by the appended claims and the entirespecification. Therefore, an electro-optical device, an electronicapparatus having the electro-optical device, and a method ofmanufacturing the electro-optical device that accompany suchmodifications still fall within the technical scope of the invention.

1. An electro-optical device, comprising: data lines extending in a dataline direction; scanning lines extending in a scanning line directionthat intersects with the data line direction; thin film transistors, oneof the thin film transistors including a channel region, the thin filmtransistors being disposed below the data lines; storage capacitors thatare disposed above the data lines, one of the storage capacitors atleast partially facing the channel region of the one of the thin filmtransistors in plan view and being formed by stacking afixed-potential-side electrode, a dielectric film, and apixel-potential-side electrode in this order away from the data lines;pixel electrodes that are disposed for respective pixels atintersections of the data lines and the scanning lines in plan view, thepixel electrodes being disposed above the storage capacitors, one of thepixel electrodes being electrically coupled to the pixel-potential-sideelectrode and the one of the thin film transistors; at least one of thefixed-potential-side electrode and the pixel-potential-side electrodeincluding a first conductive light shielding film, thefixed-potential-side electrode being extended in the data line directionand having an extending portion that extends in the scanning linedirection, the pixel-potential-side electrode being extended in the dataline direction and in the scanning line direction and having aprotruding portion that protrudes from an edge of thefixed-potential-side electrode in the scanning line direction, thepixel-potential-side electrode being electrically connected to the pixelelectrode at the protruding portion; and a conductive film formed on asurface of one of the data lines, the surface facing the channel region,the conductive film having a lower reflectivity than a conductive filmforming a main body of the one of the data lines.
 2. The electro-opticaldevice according to claim 1, the channel region of the one of the thinfilm transistors being at least partially covered by one of the datalines in plan view; and one of the data lines including a secondconductive light shielding film.
 3. The electro-optical device accordingto claim 1, one of the scanning lines being disposed in a regionincluding a region facing the channel region in plan view, beingdisposed below the one of the thin film transistors, being coupled to agate of the one of the thin film transistors through a contact hole, andincluding a third conductive light shielding film.
 4. Theelectro-optical device according to claim 1, an interlayer insulatingfilm subjected to a planarization process being stacked at least one ofbetween one of the scanning lines and the one of the thin filmtransistors, between the one of the thin film transistors and one of thedata lines, between one of the data lines and the one of the storagecapacitors, and between the one of the storage capacitors and the one ofthe pixel electrodes.
 5. The electro-optical device according to claim1, the dielectric film being formed in non-opening regions locatedbetween opening regions of the respective pixels in plan view.
 6. Theelectro-optical device according to claim 1, the edge of thefixed-potential-side electrode from which the protruding portion of thepixel-potential-side electrode protrudes being formed with a taper. 7.The electro-optical device according to claim 1, thepixel-potential-side electrode being located within a region of thefixed-potential-side electrode, in plan view.
 8. The electro-opticaldevice according to claim 1, further comprising: a relay layer that isformed by using a conductive film located at the same layer as one ofthe data lines and that relay-connects the pixel-potential-sideelectrode and a drain of the one of the thin film transistors.
 9. Theelectro-optical device according to claim 8, the one of the pixelelectrodes being electrically coupled to the relay layer through anextending portion of the pixel-potential-side electrode.
 10. Anelectronic apparatus, comprising: the electro-optical device accordingto claim
 1. 11. A method of manufacturing an electro-optical deviceincluding data lines extending in a data line direction and scanninglines extending in a scanning line direction, and that are arranged soas to intersect each other, top-gate-type thin film transistors disposedbelow the data lines, storage capacitors disposed above the data lines,and pixel electrodes disposed above the storage capacitors, the methodcomprising: forming the thin film transistors in regions correspondingto intersections of the data lines and the scanning lines in plan view;forming the data lines above the thin film transistors; forming one ofthe storage capacitors in a region facing a channel region of one of thethin film transistors in plan view, such that a fixed-potential-sideelectrode, a dielectric film, and a pixel-potential-side electrode ofthe one of the storage capacitors are stacked above the data lines inthis order and at least one of the fixed-potential-side electrode andthe pixel-potential-side electrode includes a first conductive lightshielding film, the fixed-potential-side electrode being formed toextend in the data line direction and to have an extending portion thatextends in the scanning line direction, the pixel-potential-sideelectrode being formed to extend in the data line direction and in thescanning line direction and to have a protruding portion that protrudesfrom an edge of the fixed-potential-side electrode in the scanning linedirection, the pixel-potential-side electrode being formed to beelectrically connected to the pixel electrode at the protruding portion;forming one of the pixel electrodes on the one of the storage capacitorsand electrically coupling the one of the pixel electrodes to one of thethin film transistors; and a conductive film formed on a surface of oneof the data lines, the surface facing the channel region, the conductivefilm having a lower reflectivity than a conductive film forming a mainbody of the one of the data lines.
 12. The method of manufacturing theelectro-optical device according to claim 11, further comprising: thestep of forming the one of the storage capacitors including forming theedge of the fixed-potential-side electrode, from which the protrudingportion of the pixel-potential-side electrode protrudes, with a taper byusing at least one of wet etching, plasma etching, and O₂ cleaningprocesses.
 13. An electro-optical device, comprising: data lines andscanning lines that are arranged so as to intersect each other; datalines extending in a data line direction; scanning lines extending in ascanning line direction that intersects with the data line direction;thin film transistors, one of the thin film transistors including achannel region, the thin film transistors being disposed below the datalines; storage capacitors that are disposed above the data lines, one ofthe storage capacitors at least partially facing the channel region ofthe one of the thin film transistors in plan view and being formed bystacking a fixed-potential-side electrode, a dielectric film, and apixel-potential-side electrode in this order away from the data lines;pixel electrodes that are disposed for respective pixels atintersections of the data lines and the scanning lines in plan view, thepixel electrodes being disposed above the storage capacitors, one of thepixel electrodes being electrically coupled to the pixel-potential-sideelectrode and the one of the thin film transistors; at least one of thefixed-potential-side electrode and the pixel-potential-side electrodeincluding a first conductive light shielding film, thefixed-potential-side electrode being extended in the data line directionand having an extending portion that extends in the scanning linedirection, the pixel-potential-side electrode being extended in the dataline direction and in the scanning line direction and having aprotruding portion that protrudes from an edge of thefixed-potential-side electrode in the scanning line direction, thepixel-potential-side electrode being electrically connected to the pixelelectrode at the protruding portion; and a relay layer that is formed byusing a conductive film located at the same layer as one of the datalines and that relay-connects the pixel-potential-side electrode and adrain of the one of the thin film transistors.
 14. The electro-opticaldevice according to claim 13, the channel region of the one of the thinfilm transistors being at least partially covered by one of the datalines in plan view; and one of the data lines including a secondconductive light shielding film.
 15. The electro-optical deviceaccording to claim 13, one of the scanning lines being disposed in aregion including a region facing the channel region in plan view, beingdisposed below the one of the thin film transistors, being coupled to agate of the one of the thin film transistors through a contact hole, andincluding a third conductive light shielding film.
 16. Theelectro-optical device according to claim 13, an interlayer insulatingfilm subjected to a planarization process being stacked at least one ofbetween one of the scanning lines and the one of the thin filmtransistors, between the one of the thin film transistors and one of thedata lines, between one of the data lines and the one of the storagecapacitors, and between the one of the storage capacitors and the one ofthe pixel electrodes.
 17. The electro-optical device according to claim13, the dielectric film being formed in non-opening regions locatedbetween opening regions of the respective pixels in plan view.
 18. Theelectro-optical device according to claim 13, the edge of thefixed-potential-side electrode from which the protruding portion of thepixel-potential-side electrode protrudes being formed with a taper. 19.The electro-optical device according to claim 13, thepixel-potential-side electrode being located within a region of thefixed-potential-side electrode, in plan view.